1. What are the applications of SPICE? Write down the netlist for the given circuit (Figure 1).

<img src='./qimages/15641-1.jpg'>

2. What is the basic difference between small signal and large signal models of diodes How are diode parameters like dynamic resistance, reverse saturation current and forward voltage drop measured?

3.(a) How can model parameters of BJT be extracted Explain the various objectives of circuit simulation.

4.(a) Draw and explain the schematic representation of MOSFET oxide capacitance during cut-off, linear and saturation mode. Explain the concept of channel length modulation in a N-channel MOSFET.

5. Draw and explain the equivalent circuit structure of N-MOS level-l model. Also write down the drain current equation for linear, saturation and cut-off region.

6. The parameters of the MOSFET circuitry shown in Figure 2 are VTH 0·8 80 MA/V^2 and W/L 3. Design the circuit such that the quiescent values are ID= 250 MA and VD= 2·5 V.

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7.(a) Write the differences between MOSFET and BJT. What is charge sharing effect in MOSFET?

8. Write down the characteristics of JFET. Also explain the following parameters Pinch-off voltage Break-down voltage Input resistance

9. Draw and explain the energy band diagram of heterojunction devices. What is built-in voltage? How does it affect the properties of materials ?

10. Write short notes on any two of the following:

(a) Noise models of BJT MOS capacitances HBTs Base width modulation effect in BJT