Exam Details
| Subject | Device Modelling For Circuit Simulation | |
| Paper | ||
| Exam / Course | BTCVI / BTECVI / BTELVI | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | June, 2016 | |
| City, State | new delhi, |
Question Paper
No. of Printed Pages: 3 IBIELE-013I
B.Tech. -VIEP -ELECTRONICS AND COMMUNICATION ENGINEERING (BTECVI)
Term-End Examination
UUU76 June, 2016
BIELE-O13 DEVICE MODELLING FOR
CIRCUIT SIMULATION
Time: 3 hours Maximum Marks: 70
Note: Attempt any seven questions. All questions carry equal marks. Missing data may be suitably assumed. Use of scientific calculator is permitted.
1. What is SPICE How is it different from netlist?
Draw the small signal model of a P-N junction diode.
What is the need of device modelling?
What are the parasitic capacitances that exist in MOSFETs
What is channel length modulation in MOSFETs? 5x2=10
2. Explain the DC current -voltage characteristics of an ideal diode.
What are the limitations of an ideal diode model? Explain in detail. 5 5=10
3. Explain the static models of an ideal diode and a real diode and its implementation in SPICE.
Draw and explain the large signal model of a P-N junction diode. Give its implementation in SPICE. 5 5=10
4. Explain how the temperature and area affects the diode model parameters implemented in SPICE. 10
5. Explain the operation principle of a BJT.
Draw and explain the Ebers-Moll static model of BJTs. 5 5=10
6. Write the SPICE BJT Model parameters, with their default values and units.
Explain the Base Width Effect in BJTs. 5 5=10
7. Explain the operation principle of MOSFETs. Derive the expression of drain current in all modes of operation. Draw the characteristics of MOSFETs. 10
8. What is device scaling What is the difference between short and narrow channel MOSFETs
What is charge sharing effect in MOSFET Explain the non-linear effects in MOSFET. 5 5=10
9. What are the MOS Models that exist for circuit simulation?
Explain Level-1, Level-2 and Level-3 large signal MOSFET models.
How are model parameters extracted in MOSFETs? 3 4 3=10
10. Write short notes on any two of the following: 2x5=10 DIBL Effect in MOSFETs BSIM Heterojunction Devices Noise Models of BJTs
B.Tech. -VIEP -ELECTRONICS AND COMMUNICATION ENGINEERING (BTECVI)
Term-End Examination
UUU76 June, 2016
BIELE-O13 DEVICE MODELLING FOR
CIRCUIT SIMULATION
Time: 3 hours Maximum Marks: 70
Note: Attempt any seven questions. All questions carry equal marks. Missing data may be suitably assumed. Use of scientific calculator is permitted.
1. What is SPICE How is it different from netlist?
Draw the small signal model of a P-N junction diode.
What is the need of device modelling?
What are the parasitic capacitances that exist in MOSFETs
What is channel length modulation in MOSFETs? 5x2=10
2. Explain the DC current -voltage characteristics of an ideal diode.
What are the limitations of an ideal diode model? Explain in detail. 5 5=10
3. Explain the static models of an ideal diode and a real diode and its implementation in SPICE.
Draw and explain the large signal model of a P-N junction diode. Give its implementation in SPICE. 5 5=10
4. Explain how the temperature and area affects the diode model parameters implemented in SPICE. 10
5. Explain the operation principle of a BJT.
Draw and explain the Ebers-Moll static model of BJTs. 5 5=10
6. Write the SPICE BJT Model parameters, with their default values and units.
Explain the Base Width Effect in BJTs. 5 5=10
7. Explain the operation principle of MOSFETs. Derive the expression of drain current in all modes of operation. Draw the characteristics of MOSFETs. 10
8. What is device scaling What is the difference between short and narrow channel MOSFETs
What is charge sharing effect in MOSFET Explain the non-linear effects in MOSFET. 5 5=10
9. What are the MOS Models that exist for circuit simulation?
Explain Level-1, Level-2 and Level-3 large signal MOSFET models.
How are model parameters extracted in MOSFETs? 3 4 3=10
10. Write short notes on any two of the following: 2x5=10 DIBL Effect in MOSFETs BSIM Heterojunction Devices Noise Models of BJTs
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