Exam Details
| Subject | Device Modelling For Circuit Simulation | |
| Paper | ||
| Exam / Course | BTCVI / BTECVI / BTELVI | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | December, 2015 | |
| City, State | new delhi, |
Question Paper
What is the full form of SPICE? Enlist the various applications of SPICE with a suitable example.
How is d.c. and transient analysis of the circuit done by using SPICE? Explain with a suitable example.
2. What are the applications of junction diodes in modern electronic industries How are diode parameters like bulk resistance, junction resistance, forward voltage drop and reverse breakdown voltage measured?
3. Draw and explain the noise models of bipolar junction transistor.
4. What is MOS capacitance Explain parasitic capacitances, oxide-related capacitances and junction capacitances with suitable diagrams.
5. Describe the relationship between the mask channel length (Lmask) and the electrical channel length Are they identical? If not, how would you express L in terms of Lmask and other parameters?
6. Why is LEVEL 2 MOSFET model required Derive the drain current equation and explain the variation of mobility with electric field.
7. For a d.c. circuit shown in Figure assume the MOSFET parameters VTN 2 Kn 80 uA/V^2 and W/L 4. Choose R1 and R2 such that the current in the bias resistors is approximately one-tenth of ID. Design the circuit such that ID 0·5 mA. <img src='./qimages/13351-7.jpg'>
8. Draw and explain the structure of a MESFET and also derive its drain current equation.
9.(a) Using the approximate Boltzmann's diode equation, find the change in forward bias for doubling the forward current of a germanium semiconductor diode at 290°K. What are the advantages and disadvantages of heterojunction devices? Enlist the various applications of it.
10. Write short notes on any two of the following: DIBL (Drain Induced Barrier Lowering) HEMT Introduction to BSIM Models High Frequency Model of BJT
How is d.c. and transient analysis of the circuit done by using SPICE? Explain with a suitable example.
2. What are the applications of junction diodes in modern electronic industries How are diode parameters like bulk resistance, junction resistance, forward voltage drop and reverse breakdown voltage measured?
3. Draw and explain the noise models of bipolar junction transistor.
4. What is MOS capacitance Explain parasitic capacitances, oxide-related capacitances and junction capacitances with suitable diagrams.
5. Describe the relationship between the mask channel length (Lmask) and the electrical channel length Are they identical? If not, how would you express L in terms of Lmask and other parameters?
6. Why is LEVEL 2 MOSFET model required Derive the drain current equation and explain the variation of mobility with electric field.
7. For a d.c. circuit shown in Figure assume the MOSFET parameters VTN 2 Kn 80 uA/V^2 and W/L 4. Choose R1 and R2 such that the current in the bias resistors is approximately one-tenth of ID. Design the circuit such that ID 0·5 mA. <img src='./qimages/13351-7.jpg'>
8. Draw and explain the structure of a MESFET and also derive its drain current equation.
9.(a) Using the approximate Boltzmann's diode equation, find the change in forward bias for doubling the forward current of a germanium semiconductor diode at 290°K. What are the advantages and disadvantages of heterojunction devices? Enlist the various applications of it.
10. Write short notes on any two of the following: DIBL (Drain Induced Barrier Lowering) HEMT Introduction to BSIM Models High Frequency Model of BJT
Other Question Papers
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Subjects
- Advance Microprocessor And Architecture
- Analog and Mixed Mode VLSI Design
- Analog Communication
- Analog Electronic Circuits
- Analog Integrated Circuits Design
- Antennas and Propagation
- B10-Informatics
- Basics Of Electronics Engineering
- Computer Architecture
- Computer Communication Networks
- Control Engineering
- Data Communication And Network
- Device Modelling For Circuit Simulation
- Digital Electronics
- Digital Signal Processing
- Digital System Design
- Electromagnetic Field Theory
- Electronic Measurement and Inst
- Electronic Switching Circuits
- Embedded System Design
- Information Theory And Coding
- Linear Integrated Circuits
- Microcontrollers
- Microprocessor And Its Applications
- Microwave And Radar Engineering
- Multirate Systems
- Optical Fiber Communication
- Power Electronics
- Satellite And Tv Engineering
- Signal And Systems
- Wireless Communication