Exam Details
| Subject | Basics Of Electronics Engineering | |
| Paper | ||
| Exam / Course | BTCVI / BTECVI / BTELVI | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | December, 2016 | |
| City, State | new delhi, |
Question Paper
No. of Printed Pages: 3
IBIEL-0011 B.Tech. (BTCSVI I BTECVI I BTELVI) Term-End Examination
00453
December, 2016
BIEl-001 BASICS OF ELECTRONICS ENGINEERING
Time hours Maximum Marks: 70
Note: AUempt -any seven questions. All questions carry equal marks. Use of scientific calculator is allowed.
1. Define mobility in semiconductors. Does it also depend on doping levels? 3
Differentiate among semiconductors, conductors and insulators on the basis of band gap. 3
Explain in detail the Fermi level and energy distribution of carriers inside the bands. 4
2. What are intrinsic and extrinsic semiconductors Comment on the conductivity of extrinsic semiconductors. 4
In a certain conductor with cross-sectional area of a there are 10^23 electrons/m^3 with mobility of 0.4 m^2/V.s. Determine the conductivity and resistance of a conductor of length 15 cm. 6
3. A germanium diode carries a current of 10 mA when a forward bias of 0.2 V is applied.
Estimate the reverse saturation current
Calculate the bias voltages needed for diode currents of 1 mA and 100 mA. Comment on the range of these two voltages. 6
Explain Zener breakdown and Avalanche multiplication phenomena in a p-n junction diode. 4
4. Discuss briefly the biasing of p-n junction. 5
Define "diffusion capacitance" of a p-n junction diode. Obtain an expression for the same. 5
5. What are the advantages of the FET over a conventional bipolar junction transistor Define pinch-off voltage, transconductance, amplification factor and drain resistance of an FET. 7
Explain briefly "Base width modulation". 3
6. Describe the characteristics of UJT with the help of a neat diagram. 6
Derive the relation between alpha and beta of transistor configuration. 4
7. Describe briefly the C (Current -Voltage) characteristics, basic structures and operating principles of MOSFET. 10
8. With the help of a circuit diagram, explain the working of a half wave rectifier with capacitor filter. 5
Discuss in detail "The Voltage Multiplier". 5
9. Explain the use of Bleeder resistor. 2
Compare full wave bridge and centre tapped rectifiers in terms of their ripple factor and efficiency. 5
A bridge rectifier uses four identical diodes of forward resistance of 5n each. It is supplied from a transformer with output voltage of 20 V and secondary winding resistance of 10 n. Calculate the output d.c. voltage at a d.c. load current of 100mA. 3
10. Write short notes on any two of the following: 2 x 5=10
PIN diode
Series Regulator
Heterojunction Bipolar Transistor
IBIEL-0011 B.Tech. (BTCSVI I BTECVI I BTELVI) Term-End Examination
00453
December, 2016
BIEl-001 BASICS OF ELECTRONICS ENGINEERING
Time hours Maximum Marks: 70
Note: AUempt -any seven questions. All questions carry equal marks. Use of scientific calculator is allowed.
1. Define mobility in semiconductors. Does it also depend on doping levels? 3
Differentiate among semiconductors, conductors and insulators on the basis of band gap. 3
Explain in detail the Fermi level and energy distribution of carriers inside the bands. 4
2. What are intrinsic and extrinsic semiconductors Comment on the conductivity of extrinsic semiconductors. 4
In a certain conductor with cross-sectional area of a there are 10^23 electrons/m^3 with mobility of 0.4 m^2/V.s. Determine the conductivity and resistance of a conductor of length 15 cm. 6
3. A germanium diode carries a current of 10 mA when a forward bias of 0.2 V is applied.
Estimate the reverse saturation current
Calculate the bias voltages needed for diode currents of 1 mA and 100 mA. Comment on the range of these two voltages. 6
Explain Zener breakdown and Avalanche multiplication phenomena in a p-n junction diode. 4
4. Discuss briefly the biasing of p-n junction. 5
Define "diffusion capacitance" of a p-n junction diode. Obtain an expression for the same. 5
5. What are the advantages of the FET over a conventional bipolar junction transistor Define pinch-off voltage, transconductance, amplification factor and drain resistance of an FET. 7
Explain briefly "Base width modulation". 3
6. Describe the characteristics of UJT with the help of a neat diagram. 6
Derive the relation between alpha and beta of transistor configuration. 4
7. Describe briefly the C (Current -Voltage) characteristics, basic structures and operating principles of MOSFET. 10
8. With the help of a circuit diagram, explain the working of a half wave rectifier with capacitor filter. 5
Discuss in detail "The Voltage Multiplier". 5
9. Explain the use of Bleeder resistor. 2
Compare full wave bridge and centre tapped rectifiers in terms of their ripple factor and efficiency. 5
A bridge rectifier uses four identical diodes of forward resistance of 5n each. It is supplied from a transformer with output voltage of 20 V and secondary winding resistance of 10 n. Calculate the output d.c. voltage at a d.c. load current of 100mA. 3
10. Write short notes on any two of the following: 2 x 5=10
PIN diode
Series Regulator
Heterojunction Bipolar Transistor
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Subjects
- Advance Microprocessor And Architecture
- Analog and Mixed Mode VLSI Design
- Analog Communication
- Analog Electronic Circuits
- Analog Integrated Circuits Design
- Antennas and Propagation
- B10-Informatics
- Basics Of Electronics Engineering
- Computer Architecture
- Computer Communication Networks
- Control Engineering
- Data Communication And Network
- Device Modelling For Circuit Simulation
- Digital Electronics
- Digital Signal Processing
- Digital System Design
- Electromagnetic Field Theory
- Electronic Measurement and Inst
- Electronic Switching Circuits
- Embedded System Design
- Information Theory And Coding
- Linear Integrated Circuits
- Microcontrollers
- Microprocessor And Its Applications
- Microwave And Radar Engineering
- Multirate Systems
- Optical Fiber Communication
- Power Electronics
- Satellite And Tv Engineering
- Signal And Systems
- Wireless Communication