Exam Details
| Subject | Basics Of Electronics Engineering | |
| Paper | ||
| Exam / Course | BTCVI / BTECVI / BTELVI | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | December, 2015 | |
| City, State | new delhi, |
Question Paper
1. State whether the following statements are true or false:
The highest level of energy occupied by an electron is called its Fermi-level.
In case of semiconductors or insulators, the property of conduction is dependent on temperature.
At reverse bias the number of minority carriers crossing the junction of a diode depends primarily on the concentration of doping impurities.
A zener diode is used mainly in breakdown region.
The silicon transistors are more widely used than germanium transistors because they have smaller leakage currents.
In CB configuration, the output V characteristics of a transistor is drawn. by taking VCB versus IB for constant IE
The rectifier circuit that produces the least ripples is the full wave rectifier.
The output voltage of a 7805 IC voltage regulator is 12 V.
Except the transformer, the main parts of a regulated power supply are rectifier, filter and regulator.
A transistor when connected in CE mode has a high input resistance and a low output resistance.
Explain the existence of various electron energy bands in solids. Based on these bands distinguish between insulators, conductors and semiconductors.
Explain drift and diffusion of charge carriers in semiconductors. Derive an expression for the electron current due to drift and diffusion.
Draw the characteristics of a silicon p-n junction diode with proper voltage and current levels and show the forward and reverse bias region. Give the diode current equation for both the regions.
Describe with the help of a diagram, the principle and working of a zener diode. Why is zener diode used in voltage regulator circuit?
Explain base width modulation (early effect) with the aid of plots of potential and minority carrier concentration throughout the base region.
In the circuit diagram shown below, B 100, VBE 0.8 and VCE 0.2 V. Determine whether or not silicon transistor is in saturation and find IB and IC.
<img src='./qimages/13309-4b.jpg'>
Compare the characteristics of a transistor amplifier in the three possible configurations.
Why are the transistor" amplifiers always operated above knee voltage region State various methods of improving stability.
Sketch the cross-section view of an enhancement mode MOSFET. Explain its operation and characteristics.
Distinguish between JFET and MOSFET from construction and drain characteristic point of view.
With a neat circuit diagram, explain the working principle of a regulated power supply.
Draw the circuit diagram of a centre tape full wave rectifier and explain its working.
8. Write short notes on any three of the following:
LDR
CMOS and its application
Channel Length Modulation
Biasing of BJT
The highest level of energy occupied by an electron is called its Fermi-level.
In case of semiconductors or insulators, the property of conduction is dependent on temperature.
At reverse bias the number of minority carriers crossing the junction of a diode depends primarily on the concentration of doping impurities.
A zener diode is used mainly in breakdown region.
The silicon transistors are more widely used than germanium transistors because they have smaller leakage currents.
In CB configuration, the output V characteristics of a transistor is drawn. by taking VCB versus IB for constant IE
The rectifier circuit that produces the least ripples is the full wave rectifier.
The output voltage of a 7805 IC voltage regulator is 12 V.
Except the transformer, the main parts of a regulated power supply are rectifier, filter and regulator.
A transistor when connected in CE mode has a high input resistance and a low output resistance.
Explain the existence of various electron energy bands in solids. Based on these bands distinguish between insulators, conductors and semiconductors.
Explain drift and diffusion of charge carriers in semiconductors. Derive an expression for the electron current due to drift and diffusion.
Draw the characteristics of a silicon p-n junction diode with proper voltage and current levels and show the forward and reverse bias region. Give the diode current equation for both the regions.
Describe with the help of a diagram, the principle and working of a zener diode. Why is zener diode used in voltage regulator circuit?
Explain base width modulation (early effect) with the aid of plots of potential and minority carrier concentration throughout the base region.
In the circuit diagram shown below, B 100, VBE 0.8 and VCE 0.2 V. Determine whether or not silicon transistor is in saturation and find IB and IC.
<img src='./qimages/13309-4b.jpg'>
Compare the characteristics of a transistor amplifier in the three possible configurations.
Why are the transistor" amplifiers always operated above knee voltage region State various methods of improving stability.
Sketch the cross-section view of an enhancement mode MOSFET. Explain its operation and characteristics.
Distinguish between JFET and MOSFET from construction and drain characteristic point of view.
With a neat circuit diagram, explain the working principle of a regulated power supply.
Draw the circuit diagram of a centre tape full wave rectifier and explain its working.
8. Write short notes on any three of the following:
LDR
CMOS and its application
Channel Length Modulation
Biasing of BJT
Other Question Papers
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Subjects
- Advance Microprocessor And Architecture
- Analog and Mixed Mode VLSI Design
- Analog Communication
- Analog Electronic Circuits
- Analog Integrated Circuits Design
- Antennas and Propagation
- B10-Informatics
- Basics Of Electronics Engineering
- Computer Architecture
- Computer Communication Networks
- Control Engineering
- Data Communication And Network
- Device Modelling For Circuit Simulation
- Digital Electronics
- Digital Signal Processing
- Digital System Design
- Electromagnetic Field Theory
- Electronic Measurement and Inst
- Electronic Switching Circuits
- Embedded System Design
- Information Theory And Coding
- Linear Integrated Circuits
- Microcontrollers
- Microprocessor And Its Applications
- Microwave And Radar Engineering
- Multirate Systems
- Optical Fiber Communication
- Power Electronics
- Satellite And Tv Engineering
- Signal And Systems
- Wireless Communication