Exam Details
| Subject | power semi conductor devices | |
| Paper | ||
| Exam / Course | computer science and engineering | |
| Department | ||
| Organization | Vardhaman College Of Engineering | |
| Position | ||
| Exam Date | June, 2017 | |
| City, State | telangana, hyderabad |
Question Paper
Hall Ticket No:
Question Paper Code B3352
(AUTONOMOUS) M. Tech I Semester Supplementary Examinations, June 2017
(Regulations: VCE-R15) POWER SEMI CONDUCTOR DEVICES
(Power Electronics and Electric Drives) Date: 14 June, 2017 AN
Time: 3 hours
Max Marks: 70
Answer any FIVE Questions
Each Question carries equal marks
1.
What are the properties and I-V characteristics of an ideal switch?
7M
Explain the I-V characteristics of the controlled power devices in detail.
7M
2.
Explain the Reverse Recovery Characteristics of a Diode with necessary wave forms.
4M
The forward voltage drop of a power diode is VD 1.2V at ID 300A. assuming that n=2 and VT 25.7mV. find the reverse saturation current IS
10M
3.
Explain the switching characteristics of power transistor and explain about its SPICE model.
7M
Briefly explain about the driver circuit for a power transistor.
7M
4.
Explain the switching characteristics of a MOSFET.
7M
Explain the SPICE model of the MOSFET.
7M
5.
Explain the switching characteristics of a IGBT.
7M
Compare all the devices with respect to power handled and frequency of operation.
7M
6.
Explain the switching characteristics of a thyristor.
7M
A thyristor carries a current as shown below Fig.1 and the current pulse is repeated at the frequency of fs=50KHz. Determine the average on state current IT.
Fig.1
7M
7.
Briefly explain about the thermal model of the device and steady state temperature rise.
7M
Explain about the sizing of heat sink for semiconductor devices.
7M
8.
Define Magnetic Saturation and how it occurs.
7M
How inductors and transformers are designed for line frequency?
7M
Question Paper Code B3352
(AUTONOMOUS) M. Tech I Semester Supplementary Examinations, June 2017
(Regulations: VCE-R15) POWER SEMI CONDUCTOR DEVICES
(Power Electronics and Electric Drives) Date: 14 June, 2017 AN
Time: 3 hours
Max Marks: 70
Answer any FIVE Questions
Each Question carries equal marks
1.
What are the properties and I-V characteristics of an ideal switch?
7M
Explain the I-V characteristics of the controlled power devices in detail.
7M
2.
Explain the Reverse Recovery Characteristics of a Diode with necessary wave forms.
4M
The forward voltage drop of a power diode is VD 1.2V at ID 300A. assuming that n=2 and VT 25.7mV. find the reverse saturation current IS
10M
3.
Explain the switching characteristics of power transistor and explain about its SPICE model.
7M
Briefly explain about the driver circuit for a power transistor.
7M
4.
Explain the switching characteristics of a MOSFET.
7M
Explain the SPICE model of the MOSFET.
7M
5.
Explain the switching characteristics of a IGBT.
7M
Compare all the devices with respect to power handled and frequency of operation.
7M
6.
Explain the switching characteristics of a thyristor.
7M
A thyristor carries a current as shown below Fig.1 and the current pulse is repeated at the frequency of fs=50KHz. Determine the average on state current IT.
Fig.1
7M
7.
Briefly explain about the thermal model of the device and steady state temperature rise.
7M
Explain about the sizing of heat sink for semiconductor devices.
7M
8.
Define Magnetic Saturation and how it occurs.
7M
How inductors and transformers are designed for line frequency?
7M
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