Exam Details
Subject | power semi conductor devices | |
Paper | ||
Exam / Course | computer science and engineering | |
Department | ||
Organization | Vardhaman College Of Engineering | |
Position | ||
Exam Date | January, 2018 | |
City, State | telangana, hyderabad |
Question Paper
Hall Ticket No:
Question Paper Code B3352
(AUTONOMOUS) M. Tech I Semester Regular/Supplementary Examinations, January 2018
(Regulations: VCE-R15) POWER SEMI CONDUCTOR DEVICES
(Power Electronics and Electric Drives) Date: 06 January, 2018 FN
Time: 3 hours
Max Marks: 70
Answer any FIVE Questions
Each Question carries equal marks
1.
What are the different classes of power switching devices? Briefly explain about them.
7M
Discuss about the characteristics of a real switching device.
7M
2.
Briefly discuss about operation of Schotky diode and fast recovery diodes.
8M
Write the equation which helps to determine the v-i characteristics of a power diode under dc steady state operation. Also draw the v-i characteristics and describe the different regions in it.
6M
3.
Draw the output characteristics and transfer characteristics of a power transistor. Also write short notes on it.
6M
Explain about the turn-on and turn-off process of BJT.
8M
4.
Discuss about secondary breakdown phenomenon in power MOSFETs.
7M
Using appropriate diagrams, explain the differences between enhancement type MOSFETs and depletion type MOSFETs.
7M
5.
Explain the principle of operation of IGBTs with the help of its equivalent circuit.
7M
Discuss about the turn-on characteristics of an IGBT.
7M
6.
Discuss about the effect of gate current on forward blocking voltage of a thyristor.
7M
Suggest a circuit for protecting a thyristor from high di/dt during its operation.
7M
7.
Briefly explain the functions of a heat sink. Also mention the simplified expression which can be used to determine the approximate sizing of the heat sink.
7M
Write an expression for steady state temperature rise and explain the significance of each parameter.
7M
8.
What are the steps that should be followed while designing a line frequency transformer?
7M
Write short notes on magnetic circuits and the factors that affect the magnetic field in the magnetic circuit.
7M
Question Paper Code B3352
(AUTONOMOUS) M. Tech I Semester Regular/Supplementary Examinations, January 2018
(Regulations: VCE-R15) POWER SEMI CONDUCTOR DEVICES
(Power Electronics and Electric Drives) Date: 06 January, 2018 FN
Time: 3 hours
Max Marks: 70
Answer any FIVE Questions
Each Question carries equal marks
1.
What are the different classes of power switching devices? Briefly explain about them.
7M
Discuss about the characteristics of a real switching device.
7M
2.
Briefly discuss about operation of Schotky diode and fast recovery diodes.
8M
Write the equation which helps to determine the v-i characteristics of a power diode under dc steady state operation. Also draw the v-i characteristics and describe the different regions in it.
6M
3.
Draw the output characteristics and transfer characteristics of a power transistor. Also write short notes on it.
6M
Explain about the turn-on and turn-off process of BJT.
8M
4.
Discuss about secondary breakdown phenomenon in power MOSFETs.
7M
Using appropriate diagrams, explain the differences between enhancement type MOSFETs and depletion type MOSFETs.
7M
5.
Explain the principle of operation of IGBTs with the help of its equivalent circuit.
7M
Discuss about the turn-on characteristics of an IGBT.
7M
6.
Discuss about the effect of gate current on forward blocking voltage of a thyristor.
7M
Suggest a circuit for protecting a thyristor from high di/dt during its operation.
7M
7.
Briefly explain the functions of a heat sink. Also mention the simplified expression which can be used to determine the approximate sizing of the heat sink.
7M
Write an expression for steady state temperature rise and explain the significance of each parameter.
7M
8.
What are the steps that should be followed while designing a line frequency transformer?
7M
Write short notes on magnetic circuits and the factors that affect the magnetic field in the magnetic circuit.
7M
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