Exam Details
| Subject | Industrial Electronics | |
| Paper | ||
| Exam / Course | Diploma In Electronics And Communication Engineering (DECVI)/ Advanced Level Certificate Course In Electronics And Communication Engineering (ACEVI)/ | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | December, 2015 | |
| City, State | new delhi, |
Question Paper
1. Choose the correct answer
Latching current in a SCR is
normal operating current
current corresponding to break-over voltage
minimum current to keep the device on
None of the above
In a three-phase full wave fully controlled bridge rectifier, each SCR conducts for a duration of
120°
60°
45°
30°
In a UJT, with VBB as voltage across two
base terminals, emitter potential at peak point is
n VBB
n VD
n VBB VD
n VD VBB
A UJT exhibits a negative resistance region
before the peak point
between the peak point and the valley point
after the valley point
None of the above
An ideal transistor switch has
infinite ON-value resistance
zero OFF-value resistance
no power loss
None of the above
The turn-on time of a transistor is
tON tf
tON =ts tf
tON tr
tON ts
In a single-phase semi-converter, for continuous conduction, freewheeling diode conducts for
Infinity
n
nt
a n
Draw a two-transistor representation of a silicon-controlled rectifier and describe the method and condition for its conduction.
Give the schematic representation of the basic structure of a power transistor and explain its working.
Explain the construction and draw the volt -ampere characteristic of an Insulated Gate Bipolar Transistor (IGBT).
Give comparison among Power MOSFET, Power Transistor and Power IGBT.
The intrinsic stand-off ratio for UJT is determined to be 0·60. Inter base resistance is 7 kohm. What are the UJT static values of RB1 and RB2?
Explain the V characteristic curve of UJT. Why is it called current-controlled negative-resistance device?
For a single-phase half-wave controlled rectifier system, sketch the waveforms for load voltage and load current for RL Load, and RL load with freewheeling diode.
Explain the construction and characteristics of DIAC.
With the help of a neatly labelled circuit diagram explain the working principle of a single-phase full wave half-controlled bridge rectifier using two SCRs and two diodes.
Explain the forward voltage triggering and gate triggering methods for turning on a thyristor.
7. Write short notes on any two of the following:
Three-phase Delta-Wye Bridge Rectifier
GTO
Resistance Capacitance Firing Circuit
Latching current in a SCR is
normal operating current
current corresponding to break-over voltage
minimum current to keep the device on
None of the above
In a three-phase full wave fully controlled bridge rectifier, each SCR conducts for a duration of
120°
60°
45°
30°
In a UJT, with VBB as voltage across two
base terminals, emitter potential at peak point is
n VBB
n VD
n VBB VD
n VD VBB
A UJT exhibits a negative resistance region
before the peak point
between the peak point and the valley point
after the valley point
None of the above
An ideal transistor switch has
infinite ON-value resistance
zero OFF-value resistance
no power loss
None of the above
The turn-on time of a transistor is
tON tf
tON =ts tf
tON tr
tON ts
In a single-phase semi-converter, for continuous conduction, freewheeling diode conducts for
Infinity
n
nt
a n
Draw a two-transistor representation of a silicon-controlled rectifier and describe the method and condition for its conduction.
Give the schematic representation of the basic structure of a power transistor and explain its working.
Explain the construction and draw the volt -ampere characteristic of an Insulated Gate Bipolar Transistor (IGBT).
Give comparison among Power MOSFET, Power Transistor and Power IGBT.
The intrinsic stand-off ratio for UJT is determined to be 0·60. Inter base resistance is 7 kohm. What are the UJT static values of RB1 and RB2?
Explain the V characteristic curve of UJT. Why is it called current-controlled negative-resistance device?
For a single-phase half-wave controlled rectifier system, sketch the waveforms for load voltage and load current for RL Load, and RL load with freewheeling diode.
Explain the construction and characteristics of DIAC.
With the help of a neatly labelled circuit diagram explain the working principle of a single-phase full wave half-controlled bridge rectifier using two SCRs and two diodes.
Explain the forward voltage triggering and gate triggering methods for turning on a thyristor.
7. Write short notes on any two of the following:
Three-phase Delta-Wye Bridge Rectifier
GTO
Resistance Capacitance Firing Circuit
Other Question Papers
Departments
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Subjects
- Advance Microprocessor And Architecture
- Analog And Mixed Mode Vlsi Design
- Analog Communication
- Analog Electronic Circuits
- Analog Integrated Circuits Design
- Antennas And Propagation
- Applied Electronics
- Audio and Video Engineering
- Basic Telematics
- Basics Of Electronics Engineering
- Bio Informatics
- Circuits and Networks
- Computer Architecture
- Computer Communication Networks
- Control Engineering
- Data Communication And Network
- Data Structures
- Device Modelling For Circuit Simulation
- Digital Communication
- Digital Electronics
- Digital Signal Processing
- Digital System Design
- Dip- ECE PCB Design & Testing
- Electromagnetic Field Theory
- Electronic Measurement And Instrumentations
- Electronic Measurement and Instruments
- Electronic Product Design
- Electronic Switching Circuits
- Embedded System Design
- Industrial Electronics
- Information Theory And Coding
- Linear Integrated Circuits
- Maintenance Of Electronic Equipment
- Micro Controller
- Micro Controllers
- Microelectronics Technology
- Microprocessor
- Microprocessor And Its Applications
- Microwave And Radar Engineering
- Modeling And Testing Of Digital Systems
- Multirate Systems
- Nano - Electronics
- Optical Fiber Communication
- Opto Electronics Communication Systems
- Power Electronics
- Principles of Communication Engineering
- Quantum Communication
- Rf Circuits
- Satellite And Tv Engineering
- Signal Compression
- Signals And Systems
- Technical English
- Television Engineering
- Wireless Communication