Exam Details
| Subject | Industrial Electronics | |
| Paper | ||
| Exam / Course | Diploma In Electronics And Communication Engineering (DECVI)/ Advanced Level Certificate Course In Electronics And Communication Engineering (ACEVI)/ | |
| Department | School of Engineering & Technology (SOET) | |
| Organization | indira gandhi national open university | |
| Position | ||
| Exam Date | June, 2016 | |
| City, State | new delhi, |
Question Paper
No. of Printed Pages: 4 IBIELE-0051
DIPLOMA -VIEP -ELECTRONICS AND
COMMUNICATION ENGINEERING (DECVI)
Term-End Examination
June, 2016
tJU706
BIELE-005 INDUSTRIAL ELECTRONICS
Time: 2 hours Maximum Marks: 70
Note: Attempt five questions including question no. 1 which is compulsory. Missing data may be assumed suitably. Use of scientific calculator is permitted.
1. Choose the correct answer. 7x2=14 An SCR is considered to be a semi-controlled device because it can be turned OFF but not ON with a gate pulse
(ii) it conducts only during one half-cycle of an alternating current wave
(iii) it can be turned ON but not OFF with a gate pulse
(iv) it can be turned ON only during one half-cycle of alternating voltage An SCR will be turned off when anode current is less than latching current but greater than holding current and gate signal is 0
(ii) less than holding current
(iii) less than latching current but greater than holding current and gate signal is present
(iv) Both and A modern power semiconductor device that combines the characteristics of BJTs and MOSFETs is IGBT
(ii) FCT
(iii) MCT
(iv) GTO In a UJT, the maximum value of charging resistance is associated with peak point
(ii) valley point
(iii) any point between peak and valley points
(iv) after the valley point The TRIAC can be used only in inverter
(ii) rectifier
(iii) multiquadrant chopper
(iv) cyclo converter Secondary breakdown occurs in BJT but not in MOSFET
(ii) both BJT and MOSFET
(iii) MOSFET but not in BJT
(iv) None of the above Which of the following is a two-terminal three-layer device? BJT
(ii) Power diode
(iii) MOSFET
(iv) None of the above
2. Explain the construction of an SCR with its advantages and applications. Draw the V characteristic and discuss the mode of operations of an SCR device. 14
3. Explain the principle of GTO with a neat diagram and its advantages. Also draw a circuit diagram of the application where GTO is used as a controlling device. 14
4. Explain the working of a single-phase full wave controlled rectifier with R-L load. Also draw the waveforms. 14
5. What are the various methods to turn off a thyristor? Explain the Class commutation scheme with a suitable circuit diagram.
6. Explain the function of a freewheeling diode in a controlled rectifier circuit.
Explain the principle of dv/dt triggering in a thyristor. 2x7=14
7. Write short notes on any two of the following: 2x7=14 PUT TRIAC Six-phase star half-wave rectifier
DIPLOMA -VIEP -ELECTRONICS AND
COMMUNICATION ENGINEERING (DECVI)
Term-End Examination
June, 2016
tJU706
BIELE-005 INDUSTRIAL ELECTRONICS
Time: 2 hours Maximum Marks: 70
Note: Attempt five questions including question no. 1 which is compulsory. Missing data may be assumed suitably. Use of scientific calculator is permitted.
1. Choose the correct answer. 7x2=14 An SCR is considered to be a semi-controlled device because it can be turned OFF but not ON with a gate pulse
(ii) it conducts only during one half-cycle of an alternating current wave
(iii) it can be turned ON but not OFF with a gate pulse
(iv) it can be turned ON only during one half-cycle of alternating voltage An SCR will be turned off when anode current is less than latching current but greater than holding current and gate signal is 0
(ii) less than holding current
(iii) less than latching current but greater than holding current and gate signal is present
(iv) Both and A modern power semiconductor device that combines the characteristics of BJTs and MOSFETs is IGBT
(ii) FCT
(iii) MCT
(iv) GTO In a UJT, the maximum value of charging resistance is associated with peak point
(ii) valley point
(iii) any point between peak and valley points
(iv) after the valley point The TRIAC can be used only in inverter
(ii) rectifier
(iii) multiquadrant chopper
(iv) cyclo converter Secondary breakdown occurs in BJT but not in MOSFET
(ii) both BJT and MOSFET
(iii) MOSFET but not in BJT
(iv) None of the above Which of the following is a two-terminal three-layer device? BJT
(ii) Power diode
(iii) MOSFET
(iv) None of the above
2. Explain the construction of an SCR with its advantages and applications. Draw the V characteristic and discuss the mode of operations of an SCR device. 14
3. Explain the principle of GTO with a neat diagram and its advantages. Also draw a circuit diagram of the application where GTO is used as a controlling device. 14
4. Explain the working of a single-phase full wave controlled rectifier with R-L load. Also draw the waveforms. 14
5. What are the various methods to turn off a thyristor? Explain the Class commutation scheme with a suitable circuit diagram.
6. Explain the function of a freewheeling diode in a controlled rectifier circuit.
Explain the principle of dv/dt triggering in a thyristor. 2x7=14
7. Write short notes on any two of the following: 2x7=14 PUT TRIAC Six-phase star half-wave rectifier
Other Question Papers
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- Analog Communication
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- Technical English
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