Exam Details
Subject | nano science and nano technology | |
Paper | ||
Exam / Course | m.sc.physics | |
Department | ||
Organization | solapur university | |
Position | ||
Exam Date | November, 2016 | |
City, State | maharashtra, solapur |
Question Paper
Master of Science II (Physics Material Science)
Examination: Oct Nov 2016 Semester IV (Old CGPA)
SLR No. Day
Date Time Subject Name Paper
No. Seat No.
SLR SH
567
Thursday
24/11/2016
02:30 PM
to
05:00 PM
Nano Science
Nanotechnology
C
XVI
Instructions: Q.No.1 and 2 are compulsory.
Answer any three questions from Q.No.3 to Q.No.7.
All questions carry equal marks.
Total Marks: 70
Q.1 Choose the correct alternatives 08
For Silicon, at 300K band gap is
1.210 eV 1.100 eV
0.785 eV 0.720 eV
Density states for the 2D structure can be expressed as,
All three spatial directions are quantized in
3D structure 2D structure
1D structure 0D structure
The example for 2D structure is
Quantum well Quantum wire
Quantum dot None of these
The Fermi energy of Li at 0K is
3.72 eV eV
4.72 eV 2.72 eV
The boron Nitride can exist in
Hexagonal form Rhombohedral form
Cubic form All of these
is a type of switching device that uses controlled tunneling to
amplify current.
Double electron transistor Single electron transistor
Bipolar junction transistor Zener diode
Fullerenes are in the form of
Hollow Sphere Ellipsoid
Tube All the above
Page 1 of 2
Fill in the gaps 06
technique is more convenient for Nano fabrication.
According to band structure the conductors have field energy
levels in the conduction band.
The ceramic materials used in Scanning Probe Microscope are
gives higher resolution than conventional SEM.
The switching device that uses controlled electron tunneling to amplify
current is
Twisting the Boron- Nitride nanotubes creates a in the nanotube
Q.2 Attempt the followings 14
Write a note on Poole Frankel effect
Explain the basic principle of SPM technique
How would you classify carbon Nano tube? Discuss the unique properties of
CNT.
Q.3 With necessary theory, explain the field enhanced thermionic emission. 08
How do you distinguish 3D, 2D, 1D and 0D systems? 06
Q.4 Bottom up technique is more convenient for nano fabrication, explain 08
Describe the lithographic process, what are its limitations? 06
Q.5 With a neat sketch, explain the e-beam evaporation technique. 08
Discuss the steps involved in the Chemical Vapor Deposition process. 06
Q.6 Discuss the Pulsed Laser Deposition technique used for thin film deposition. 08
What are the advantages of solgel technique compared to PVD technique? 06
Q.7 With a neat schematic, explain the construction and working of STM. 08
Write a note on single electron transistor. 06
Page 2 of 2
Examination: Oct Nov 2016 Semester IV (Old CGPA)
SLR No. Day
Date Time Subject Name Paper
No. Seat No.
SLR SH
567
Thursday
24/11/2016
02:30 PM
to
05:00 PM
Nano Science
Nanotechnology
C
XVI
Instructions: Q.No.1 and 2 are compulsory.
Answer any three questions from Q.No.3 to Q.No.7.
All questions carry equal marks.
Total Marks: 70
Q.1 Choose the correct alternatives 08
For Silicon, at 300K band gap is
1.210 eV 1.100 eV
0.785 eV 0.720 eV
Density states for the 2D structure can be expressed as,
All three spatial directions are quantized in
3D structure 2D structure
1D structure 0D structure
The example for 2D structure is
Quantum well Quantum wire
Quantum dot None of these
The Fermi energy of Li at 0K is
3.72 eV eV
4.72 eV 2.72 eV
The boron Nitride can exist in
Hexagonal form Rhombohedral form
Cubic form All of these
is a type of switching device that uses controlled tunneling to
amplify current.
Double electron transistor Single electron transistor
Bipolar junction transistor Zener diode
Fullerenes are in the form of
Hollow Sphere Ellipsoid
Tube All the above
Page 1 of 2
Fill in the gaps 06
technique is more convenient for Nano fabrication.
According to band structure the conductors have field energy
levels in the conduction band.
The ceramic materials used in Scanning Probe Microscope are
gives higher resolution than conventional SEM.
The switching device that uses controlled electron tunneling to amplify
current is
Twisting the Boron- Nitride nanotubes creates a in the nanotube
Q.2 Attempt the followings 14
Write a note on Poole Frankel effect
Explain the basic principle of SPM technique
How would you classify carbon Nano tube? Discuss the unique properties of
CNT.
Q.3 With necessary theory, explain the field enhanced thermionic emission. 08
How do you distinguish 3D, 2D, 1D and 0D systems? 06
Q.4 Bottom up technique is more convenient for nano fabrication, explain 08
Describe the lithographic process, what are its limitations? 06
Q.5 With a neat sketch, explain the e-beam evaporation technique. 08
Discuss the steps involved in the Chemical Vapor Deposition process. 06
Q.6 Discuss the Pulsed Laser Deposition technique used for thin film deposition. 08
What are the advantages of solgel technique compared to PVD technique? 06
Q.7 With a neat schematic, explain the construction and working of STM. 08
Write a note on single electron transistor. 06
Page 2 of 2
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