M.Sc. DEGREE EXAMINATION, APRIL 2016
NANOELECTRONICS AND NANO DEVICES
(CBCS 2013 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 2 20)
Answer all questions.
1. What is HEMT?
2. Mention any two uses of STM in nanofabrication.
3. What are the advantages of FeRAM over other memory
devices?
4. Write the applications of surface acoustic wave sensor.
5. Define spin relaxation.
6. How to generate spin polarization?
7. What is Coloumb blockade?
8. What is the use of DNA on nanocomputers?
9. Write the principle of quantum dot laser.
10. What is photo detector?
Sub. Code
533302
RW-11018
2
Sp 5
Part B 5 25)
Answer all questions
11. Describe in detail the existence of nanoelectronics.
Or
Write a detailed note on electron beam lithography
and its applications.
12. Explain in detail the FeRAM circuit design with a
neat diagram.
Or
Explain the gas sensors to determine hazardous
gases.
13. Describe in detail the magneto resistance and its
applications.
Or
Explain the role of spin in MRAM devices.
14. With an equivalent circuit explain the single
electron transistors
Or
Illustrate the role of molecular modeling in
nanodevices.
15. Differentiate LCD and organic electroluminescence.
Or
What are OLEDs? What are the materials used for
OLEDs Write the applications of OLEDs.
RW-11018
3
Sp 5
Part C 10 30)
Answer any three questions.
16. Explain in detail the molecular beam epitaxy for
nanofabrication with a neat diagram.
17. Describe in detail the construction, various components
and working of an electrochemical cell.
18. Derive the Landau-Lifshitz Gilbert equation.
19. Describe in detail the uses of optical fibres in nanoscale
devices. Mention their advantages and applications.
20. Explain the preparation, working and applications of
electroluminescent organic materials.