Exam Details
Subject | analog electronic circuits | |
Paper | paper 2 | |
Exam / Course | b.tech | |
Department | ||
Organization | Visvesvaraya Technological University | |
Position | ||
Exam Date | 2018 | |
City, State | karnataka, belagavi |
Question Paper
Third Semester B.E Degree(CBCS) Examination
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing
1 a Draw a double ended clipper circuit and explain its working principle with transfer
characteristics.
b For the sketch shown fig. below, Vi varies
sketch the output voltage Vo to the same time scale as
the input voltage. Assume ideal diode
c Write the procedure for analyzing the
clamping circuit, determine output voltage
for the network shown in fig. Assume
f=1000Hz and ideal diode.
2 a Consider a fixed bias circuit of a transistor. Obtain expressions for stability factor S
SVBE and Sβ. Draw the circuit diagram
b For the circuit shown in fig.
c Define operating point. Explain its significance
3 a Obtain parameter model for CE configuration.
b Draw the circuit of common base amplifier. Derive the expression for current gain, voltage
gain, input and output impedance using the model
c For the emitter follower circuit shown
values of re, Zi, Zo, voltage gain(A
assume β=100 and ro= 50kΩ
USN
Model Question Paper
Analog Electronic circuits
one full question from each m
Module 1
from 0 to 150
or
find IC, VB, VE, R1 and SICO
Module 2
er in fig. obtain the
AV) and current gain
Ω
17EE34
ne module
7 Marks
7 Marks
6 Marks
SICO, 9 Marks
7 Marks
4 Marks
5 Marks
7 Marks
8 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
or
4 a Define h parameters and hence derive h-parameter model of CC-BJT 6 Marks
b State and prove miller's theorem 6 Marks
c For common base amplifier shown in fig.
determine Zi, AI, AV, and ZO using complete
hybrid equivalent model. (Given hie=1.6kΩ,
hfe=100, hre=2 x hoe=20μS.)
8 Marks
Module 3
5 a Draw the circuit of Darlington emitter follower. Derive the expression for current gain,
voltage gain, input and output impedance using the model.
10Marks
b For the cascode circuit shown below calculate
The dc bias voltages VB1,VB2,VC2
The no load voltage gain and the output voltages
VO2=VO
The voltage gain with load of 10kΩ connected to
the second stage and the output voltage VO
Input and output impedances
10 Marks
or
6 a For the voltage series feedback amplifier topology, obtain expression for AV and Rif. Also
explain the principle of voltage amplifier used in feedback amplifiers.
10 Marks
b List and explain the advantages of employing negative feedback in amplifiers 6 Marks
c Explain the difference between cascade and cascode connections and its applications 4 Marks
Module 4
7 a With a neat diagram explain transformer coupled power amplifier and derive the
expression for AC power delivered to the load, show that the maximum efficiency is 50%.
10 Marks
b State and explain Barkhausen criterion for sustained oscillations. 5 Marks
c A crystal has following parameters:
L=0.334H, 0.065pF, CM=1pF, R=5.5kΩ
Calculate series resonant frequency.
Calculate parallel resonant frequency.
5 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
Find Q of the crystal.
or
8 a Explain the working of complementary symmetry class B amplifier 6 Marks
b Derive an expression for frequency of oscillations in wien bridge oscillator 8 Marks
c Find the values of RC, R. and C for an RC -phase shift oscillator for a frequency of
oscillation of 1000 Hz. A transistor is having hfe=200 and hie=2kΩ.
6 Marks
Module 5
9 a Draw the circuit for JFET common source amplifier using fixed biased configuration and
determine its input impedance, output impedance and voltage gain using ac equivalent
small signal model
10 Marks
b Explain the working and construction of JFET in detail and draw its transfer characteristics
and drain characteristics.
10 Marks
or
10 a Explain the depletion and enhancement type MOSFETs, their characteristics and
frequency response
10 Marks
b For the circuit shown in fig.
Calculate Zi and Zo
Calculate AV
Calculate VO, for Vi=1mV(rms)
Repeat from to
neglecting the effect of rd10
(Given IDSS=12mA, VP=-3.5V, VGSQ=
0.75V, rd=50kΩ)
10 Marks
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing
1 a Draw a double ended clipper circuit and explain its working principle with transfer
characteristics.
b For the sketch shown fig. below, Vi varies
sketch the output voltage Vo to the same time scale as
the input voltage. Assume ideal diode
c Write the procedure for analyzing the
clamping circuit, determine output voltage
for the network shown in fig. Assume
f=1000Hz and ideal diode.
2 a Consider a fixed bias circuit of a transistor. Obtain expressions for stability factor S
SVBE and Sβ. Draw the circuit diagram
b For the circuit shown in fig.
c Define operating point. Explain its significance
3 a Obtain parameter model for CE configuration.
b Draw the circuit of common base amplifier. Derive the expression for current gain, voltage
gain, input and output impedance using the model
c For the emitter follower circuit shown
values of re, Zi, Zo, voltage gain(A
assume β=100 and ro= 50kΩ
USN
Model Question Paper
Analog Electronic circuits
one full question from each m
Module 1
from 0 to 150
or
find IC, VB, VE, R1 and SICO
Module 2
er in fig. obtain the
AV) and current gain
Ω
17EE34
ne module
7 Marks
7 Marks
6 Marks
SICO, 9 Marks
7 Marks
4 Marks
5 Marks
7 Marks
8 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
or
4 a Define h parameters and hence derive h-parameter model of CC-BJT 6 Marks
b State and prove miller's theorem 6 Marks
c For common base amplifier shown in fig.
determine Zi, AI, AV, and ZO using complete
hybrid equivalent model. (Given hie=1.6kΩ,
hfe=100, hre=2 x hoe=20μS.)
8 Marks
Module 3
5 a Draw the circuit of Darlington emitter follower. Derive the expression for current gain,
voltage gain, input and output impedance using the model.
10Marks
b For the cascode circuit shown below calculate
The dc bias voltages VB1,VB2,VC2
The no load voltage gain and the output voltages
VO2=VO
The voltage gain with load of 10kΩ connected to
the second stage and the output voltage VO
Input and output impedances
10 Marks
or
6 a For the voltage series feedback amplifier topology, obtain expression for AV and Rif. Also
explain the principle of voltage amplifier used in feedback amplifiers.
10 Marks
b List and explain the advantages of employing negative feedback in amplifiers 6 Marks
c Explain the difference between cascade and cascode connections and its applications 4 Marks
Module 4
7 a With a neat diagram explain transformer coupled power amplifier and derive the
expression for AC power delivered to the load, show that the maximum efficiency is 50%.
10 Marks
b State and explain Barkhausen criterion for sustained oscillations. 5 Marks
c A crystal has following parameters:
L=0.334H, 0.065pF, CM=1pF, R=5.5kΩ
Calculate series resonant frequency.
Calculate parallel resonant frequency.
5 Marks
17EE34
Model Question Paper
Third Semester B.E Degree(CBCS) Examination
Analog Electronic circuits
Time 3hrs Max Marks:100
Note: Answer FIVE full questions,choosing one full question from each module
Find Q of the crystal.
or
8 a Explain the working of complementary symmetry class B amplifier 6 Marks
b Derive an expression for frequency of oscillations in wien bridge oscillator 8 Marks
c Find the values of RC, R. and C for an RC -phase shift oscillator for a frequency of
oscillation of 1000 Hz. A transistor is having hfe=200 and hie=2kΩ.
6 Marks
Module 5
9 a Draw the circuit for JFET common source amplifier using fixed biased configuration and
determine its input impedance, output impedance and voltage gain using ac equivalent
small signal model
10 Marks
b Explain the working and construction of JFET in detail and draw its transfer characteristics
and drain characteristics.
10 Marks
or
10 a Explain the depletion and enhancement type MOSFETs, their characteristics and
frequency response
10 Marks
b For the circuit shown in fig.
Calculate Zi and Zo
Calculate AV
Calculate VO, for Vi=1mV(rms)
Repeat from to
neglecting the effect of rd10
(Given IDSS=12mA, VP=-3.5V, VGSQ=
0.75V, rd=50kΩ)
10 Marks
Subjects
- additional mathematics – ii
- additional mathematics-i
- advanced calculus and numerical methods
- alternative building materials
- analog and digital communication systems
- analog electronic circuits
- analog electronics
- automobile engineering
- automotive electronics
- basic electrical engineering
- basic electronics i & ii
- c-programming for problem solving
- calculus and linear algebra
- clinical instrumentation – ii
- computer integrated manufacturing
- constitution of india, professional ethics and human rights
- construction management and entrepreneurship
- control engineering
- design for manufacturing
- design of machine elements
- design of steel structural elements
- digital electronics
- digital system design
- electric circuit analysis
- electrical and electronic measurements
- electronic instrumentation
- elements of civil engineering and mechanics
- elements of mechanical engineering
- embedded system design and programming
- energy auditing
- energy engineering
- engineering chemistry
- engineering electromagnetics
- engineering graphics
- engineering mathematics – iv
- engineering mathematics-i
- engineering mathematics-ii
- engineering mathematics-iii
- engineering physics
- environmental protection and management
- finite element method
- finite element method of analysis
- fluid power systems
- heat transfer
- high voltage engineering
- highway engineering
- integration of distributed generation
- kannada kali
- kannada mansu
- machine learning
- matrix method of structural analysis
- mechatronics
- metal forming
- mobile communication
- network analysis
- numerical methods and applications
- oops with c++
- power and industrial electronics
- power system analysis 2
- power system protection
- smart materials & mems
- software application lab
- solid waste management
- technical english – 1
- total quality management
- transformers and generators
- tribology
- water resources management
- water supply and treatment engineering