Exam Details
| Subject | pulse and digital circuits | |
| Paper | ||
| Exam / Course | b.tech | |
| Department | ||
| Organization | Vardhaman College Of Engineering | |
| Position | ||
| Exam Date | May, 2018 | |
| City, State | telangana, hyderabad |
Question Paper
Hall Ticket No:
Question Paper Code: A3411
VARDHAMAN COLLEGE OF ENGINEERING
(AUTONOMOUS) B. Tech IV Semester Regular/Supplementary Examinations, May 2018
(Regulations: VCE-R15) PULSE AND DIGITAL CIRCUITS
(Electronics and Communication Engineering) Date: 22 May, 2018 FN
Time: 3 hours
Max Marks: 75
Answer ONE question from each Unit
All Questions Carry Equal Marks
Unit I
1.
Explain the working of a High Pass RC circuit for a sinusoidal input. Why is the Capacitor called as a blocking capacitor?
7M
For a High Power RC circuit an exponential input is applied, prove that smaller the time constant smaller will be the output peak with an example.
8M
2.
Explain the working of the Ringing circuit. Derive the expression of Vmax.
7M
For a High Pass RC circuit, prove that for any periodic input waveform the average level of the steady state output signal is always zero independently of the d-c level of the input.
8M
Unit II
3.
Explain the following with respect to a diode:
i. Forward recovery time
ii. Reverse recovery time
8M
A silicon diode operates at forward voltage of 0.4v, calculate the factor by which the current will be multiplied when the temperature is increased from 25 to 150oc.
7M
4.
Discuss the effect on diode characteristics on clamping voltage.
7M
Describe the design aspects of transistor switch.
8M
Unit III
5.
What is a Multivibrator? Differentiate the three types of Multivibrators.
8M
Design a fixed bias binary with the given following specifications: VCC=VBB=12V, hfe(min)=20 and ic(sat)=4mA. Assume silicon transistor.
7M
6.
Illustrate the design process of self-biased transistor binary.
8M
Design a self biased bistable multivibrator using silicon transistors given Vcc=6V, hfe(min)=30, ice(sat) =10ma. Assume appropriate junction voltages for your design.
7M
Unit IV
7.
Derive the expression for sweep speed error and displacement error in time base generators.
8M
Explain the basic principle of bootstrap sweep circuit.
7M
8.
Explain the different methods for linearity improvement.
8M
Bring out the necessity and importance of current sweep circuits. List out its application.
7M
Unit V
9.
Explain the four diode sampling gate with a neat circuit diagram.
8M
Write a short note on:
i. Chopper stabilized amplifier
ii. Six diode sampling rate
7M
10.
Explain realization of two input NOR gate using DCTL.
7M
Realize two input OR and AND using diodes.
8M
Question Paper Code: A3411
VARDHAMAN COLLEGE OF ENGINEERING
(AUTONOMOUS) B. Tech IV Semester Regular/Supplementary Examinations, May 2018
(Regulations: VCE-R15) PULSE AND DIGITAL CIRCUITS
(Electronics and Communication Engineering) Date: 22 May, 2018 FN
Time: 3 hours
Max Marks: 75
Answer ONE question from each Unit
All Questions Carry Equal Marks
Unit I
1.
Explain the working of a High Pass RC circuit for a sinusoidal input. Why is the Capacitor called as a blocking capacitor?
7M
For a High Power RC circuit an exponential input is applied, prove that smaller the time constant smaller will be the output peak with an example.
8M
2.
Explain the working of the Ringing circuit. Derive the expression of Vmax.
7M
For a High Pass RC circuit, prove that for any periodic input waveform the average level of the steady state output signal is always zero independently of the d-c level of the input.
8M
Unit II
3.
Explain the following with respect to a diode:
i. Forward recovery time
ii. Reverse recovery time
8M
A silicon diode operates at forward voltage of 0.4v, calculate the factor by which the current will be multiplied when the temperature is increased from 25 to 150oc.
7M
4.
Discuss the effect on diode characteristics on clamping voltage.
7M
Describe the design aspects of transistor switch.
8M
Unit III
5.
What is a Multivibrator? Differentiate the three types of Multivibrators.
8M
Design a fixed bias binary with the given following specifications: VCC=VBB=12V, hfe(min)=20 and ic(sat)=4mA. Assume silicon transistor.
7M
6.
Illustrate the design process of self-biased transistor binary.
8M
Design a self biased bistable multivibrator using silicon transistors given Vcc=6V, hfe(min)=30, ice(sat) =10ma. Assume appropriate junction voltages for your design.
7M
Unit IV
7.
Derive the expression for sweep speed error and displacement error in time base generators.
8M
Explain the basic principle of bootstrap sweep circuit.
7M
8.
Explain the different methods for linearity improvement.
8M
Bring out the necessity and importance of current sweep circuits. List out its application.
7M
Unit V
9.
Explain the four diode sampling gate with a neat circuit diagram.
8M
Write a short note on:
i. Chopper stabilized amplifier
ii. Six diode sampling rate
7M
10.
Explain realization of two input NOR gate using DCTL.
7M
Realize two input OR and AND using diodes.
8M
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