Exam Details
Subject | basic electronics | |
Paper | ||
Exam / Course | b.c.a | |
Department | ||
Organization | Vardhaman Mahaveer Open University | |
Position | ||
Exam Date | December, 2017 | |
City, State | rajasthan, kota |
Question Paper
BCA-03
December Examination 2017
BCA Pt. I Examination
Basic Electronics
Paper BCA-03
Time 3 Hours Max. Marks 100
Note: The question paper is divided into three sections B and C. Write answers as per given instructions.
Section A 10 × 2 20
(Very Short Answer Questions)
Note: Answer all questions. As per the nature of the question delimit your answer in one word, one sentence or maximum upto 30 words. Each question carries 2 marks.
What is diffusion current?
What is basic use of zener diode?
Which kind of device is Transistor?
What is latch in digital electronics?
What do you understand by Early Effect in Transistors?
What is flip flop?
285
BCA-03 200 3 (P.T.O.)
BCA-03 200 3 (Contd.)
285
Write any two benefits of designing Universal Gates?
(viii) What do you mean by doping concentration?
Write the statement of Fermi Dirac Energy function.
Write about tunnel breakdown.
Section B 4 × 10 40
(Short Answer Questions)
Note: Answer any four questions. Each answer should not
exceed 200 words. Each question carries 10 marks.
Discuss the functioning of Full Wave Rectifier.
Explain stabilizing factor?
Discuss the CC configuration of amplifier with neat and clean
diagram.
Describe minimization through K-Map for
Explain the differences CMOS, NMOS, PMOS and TTL.
Describe statement of duality property with an example.
Describe the conversion of OR, EX-OR operations by using
NAND Gate with the property of Universal Gate.
Explain current characteristics in PNP transistor.
285
BCA-03 200 3
Section C 2 × 20 40
(Long Answer Questions)
Note: Answer any two questions. You have to delimit your each
answer maximum upto 500 words. Each question carries
20 marks.
10) Describe the functioning of Zener diode in line and load
characteristics.
11) Explain the various series and shunt biasing operations of
clipper and clamper circuit.
12) Explain SOP and POS process of K-map.
13) Explain Donor and Acceptor Concentration phenomenon in
intrinsic and extrinsic semiconductors.
December Examination 2017
BCA Pt. I Examination
Basic Electronics
Paper BCA-03
Time 3 Hours Max. Marks 100
Note: The question paper is divided into three sections B and C. Write answers as per given instructions.
Section A 10 × 2 20
(Very Short Answer Questions)
Note: Answer all questions. As per the nature of the question delimit your answer in one word, one sentence or maximum upto 30 words. Each question carries 2 marks.
What is diffusion current?
What is basic use of zener diode?
Which kind of device is Transistor?
What is latch in digital electronics?
What do you understand by Early Effect in Transistors?
What is flip flop?
285
BCA-03 200 3 (P.T.O.)
BCA-03 200 3 (Contd.)
285
Write any two benefits of designing Universal Gates?
(viii) What do you mean by doping concentration?
Write the statement of Fermi Dirac Energy function.
Write about tunnel breakdown.
Section B 4 × 10 40
(Short Answer Questions)
Note: Answer any four questions. Each answer should not
exceed 200 words. Each question carries 10 marks.
Discuss the functioning of Full Wave Rectifier.
Explain stabilizing factor?
Discuss the CC configuration of amplifier with neat and clean
diagram.
Describe minimization through K-Map for
Explain the differences CMOS, NMOS, PMOS and TTL.
Describe statement of duality property with an example.
Describe the conversion of OR, EX-OR operations by using
NAND Gate with the property of Universal Gate.
Explain current characteristics in PNP transistor.
285
BCA-03 200 3
Section C 2 × 20 40
(Long Answer Questions)
Note: Answer any two questions. You have to delimit your each
answer maximum upto 500 words. Each question carries
20 marks.
10) Describe the functioning of Zener diode in line and load
characteristics.
11) Explain the various series and shunt biasing operations of
clipper and clamper circuit.
12) Explain SOP and POS process of K-map.
13) Explain Donor and Acceptor Concentration phenomenon in
intrinsic and extrinsic semiconductors.
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