M.Sc. DEGREE EXAMINATION, NOVEMBER 2017
Second Semester
Electronics
Elective NUCLEAR ELECTRONICS
(CBCS 2012 onwards)
Time 3 Hours Maximum 75 Marks
Part A (10 x 2 20)
Answer all the questions.
1. Give a graphical representation of photon absorption
coefficient as a function of gamma ray energy for silicon
and germanium.
2. What is Compton scattering?
3. What is the role of a p-n junction?
4. What are the advantages of a fully depleted detector over
a partially depleted detector?
5. What are the two modes for measuring nuclear detector
signals? Write a few lines about them.
6. What are surface barrier detectors?
7. Draw the double differentiation pulse shaping network.
8. What is the advantage and disadvantage of
semi-gaussian shaping?
Sub. Code
1MELE2D
AFC-10568
2
WK16
9. What is pulse shape discrimination?
10. What is a Scalar?
Part B x 5 25)
Answer all questions, choosing either or
11. Explain in brief
Photoelectric effect
Pair production
Or
Explain the mechanism of charge production in
detector medium.
12. Discuss in brief the interaction of photons with
Silicon and germanium.
Or
Discuss the properties of reverse biased junction.
13. Explain the working of a surface barrier detector
with necessary schematic
Or
Write brief notes on ray spectroscopy.
14. Discuss briefly biased amplifiers.
Or
Explain delay line shaping in brief.
15. Explain a voltage sensitive preamplifier with
necessary schematic diagram.
Or
Discuss the operation of a single channel analyzer.
AFC-10568
3
WK16
Part C 10 30)
Answer any three questions.
16. Explain linear and mass coefficient of gamma rays in
matter.
17. Discuss the interaction of heavy charged particles with
Silicon and germanium.
18. Discuss the two types of position sensitive detectors.
19. Write brief notes on pole zero cancellation and baseline
restoration.
20. Discuss the basic coincidence technique with an
illustration of a simple coincidence measuring technique.
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