M.Sc. (Semester IV) (CBCS) Examination Nov/Dec-2018
Electronics
NANOELECTRONICS
Time: 2½ hrs Max. Marks: 70
Instructions: Attempt five questions.
Q.1 and 2 are compulsory.
Answer any three questions from Q.3 to Q.7
Figures to the right indicate full marks.
Q.1 Choose correct answer. 08
The hetero-junctions are based on row compounds.
III-IV III-V
IV-V IV-III
As device or feature size is reduced towards a nanometer, more and
more purely begin to emerge.
Classical effect Quantum effect
Nanoelectronics All of these
The concept of SET is based on behavior of
nanostructures.
Zero Two
One Three
For a photoresist, the resist material is initially insoluble and
through a chemical reaction when exposed to light it become soluble.
Positive Negative
Lithography IC
The split gate technique is used to the electron gas
dimensionality.
Increase Decrease
Equal None of these
The OLED does not requires a
Filter Backlight
Both a and b frontlight
The triangular well wave functions are due to the asymmetry of
the potential well.
Neither symmetric or antisymmetric
Symmetric
Neither asymmetric or antisymmetric
Antisymmetric
The is the organic semiconductors.
PolyPhenyleneVinylene PolyFluOrene
C-60 All of these
State True or false. 06
The quantum wire is effectively zero dimensional electron gas system.
The motion of particle in the nanoworld is determined by wave and
quantum mechanics.
The multiple quantum wells are formed by multiple quantum
well.
The Coulomb Blockade voltage range is in between and +e/2C.
The modulation doped hetero- junctions gives low frequency transistors,
MODFET.
For parabolic well, the energy levels are proportional to index n.
Q.2 Attempt two short questions. 10
Explain the concept of superlattice
Discuss the limitations of microelectronics
Discuss resonant tunneling effect
Explain the square quantum well of finite depth. 04
Q.3 Explain in detail Heterojunctions. 09
Write a note on quantum wire. 05
Q.4 Explain the parabolic and triangular quantum well. 09
Write a note on multiple quantum well. 05
Q.5 Explain the fabrication methods of nanomaterials. 09
Write a note on Coulomb Blockade. 05
Q.6 Explain the concept of superlattice and discuss the Kronig-Penney model of superlattice.09
Write note on organic semiconductor. 05
Q.7 Explain in detail Single Electron Transistor. 09
Write a note on any three characteristics length in nanostructures. 05