Exam Details
| Subject | electronic devices and circuits | |
| Paper | ||
| Exam / Course | b.tech | |
| Department | ||
| Organization | Institute Of Aeronautical Engineering | |
| Position | ||
| Exam Date | November, 2018 | |
| City, State | telangana, hyderabad |
Question Paper
Hall Ticket No Question Paper Code: AEC001
INSTITUTE OF AERONAUTICAL ENGINEERING
(Autonomous)
Four Year B.Tech III Semester End Examinations (Regular) November, 2018
Regulation: IARE R16
ELECTRONIC DEVICES AND CIRCUITS
Time: 3 Hours (Common to ECE EEE) Max Marks: 70
Answer ONE Question from each Unit
All Questions Carry Equal Marks
All parts of the question must be answered in one place only
UNIT I
1. Derive the expression for diode equation with neat sketches.
Explain semi-conductors, insulators and metals classification using energy band diagrams.
2. Explain how Zener diode can act as a Voltage Regulator.
How a PN junction diode works? Sketch and explain the V-I characteristics of PN diode with a
neat diagram.
UNIT II
3. Draw a neat diagram and explain the operation of full wave bridge rectifier.
List the types of filters used in rectification. Derive the expression for ripple factor using C-filter.
4. What is Rectification efficiency? Derive expression for the following
i. Half wave rectifier
ii. Full wave rectifier
Explain the construction and working of Tunnel diode.
UNIT III
5. Describe the working principle of MOSFET in enhancement mode.
Compare CE, CB and CC configurations. Distinguish between BJT and FET devices.
6. Compare and contrast construction of JFET with MOSFET. Sketch the circuit symbols of all
MOSFETs
Sketch the drain characteristics of a n-channel JFET and Explain it.
UNIT IV
7. Sketch the selfbias circuit with BJT. Derive expressions for stability factor "S".
What is stability factor? Discuss the factors that cause instability of biasing circuit.
8. Discuss the need for biasing a transistor. Illustrate the DC load line analysis of BJT.
Sketch and illustrate various biasing techniques of JFET.
Page 1 of 2
UNIT V
9. Give the complete analysis of CB transistor amplifier circuit using h-parameters. Derive expressions
for the current gain, voltage gain, input impedance and output admittance.
Sketch the h-parameters equivalent circuit for a common emitter amplifier and derive the expression
for Ai Ri, Av.
10. Describe the analysis of generalized transistor amplifier circuit using h-parameter model. Derive
the equation for input impedance, voltage gain and output admittance.
Derive the expressions for Zi, Zo and Av for common source J-FET amplifier.
INSTITUTE OF AERONAUTICAL ENGINEERING
(Autonomous)
Four Year B.Tech III Semester End Examinations (Regular) November, 2018
Regulation: IARE R16
ELECTRONIC DEVICES AND CIRCUITS
Time: 3 Hours (Common to ECE EEE) Max Marks: 70
Answer ONE Question from each Unit
All Questions Carry Equal Marks
All parts of the question must be answered in one place only
UNIT I
1. Derive the expression for diode equation with neat sketches.
Explain semi-conductors, insulators and metals classification using energy band diagrams.
2. Explain how Zener diode can act as a Voltage Regulator.
How a PN junction diode works? Sketch and explain the V-I characteristics of PN diode with a
neat diagram.
UNIT II
3. Draw a neat diagram and explain the operation of full wave bridge rectifier.
List the types of filters used in rectification. Derive the expression for ripple factor using C-filter.
4. What is Rectification efficiency? Derive expression for the following
i. Half wave rectifier
ii. Full wave rectifier
Explain the construction and working of Tunnel diode.
UNIT III
5. Describe the working principle of MOSFET in enhancement mode.
Compare CE, CB and CC configurations. Distinguish between BJT and FET devices.
6. Compare and contrast construction of JFET with MOSFET. Sketch the circuit symbols of all
MOSFETs
Sketch the drain characteristics of a n-channel JFET and Explain it.
UNIT IV
7. Sketch the selfbias circuit with BJT. Derive expressions for stability factor "S".
What is stability factor? Discuss the factors that cause instability of biasing circuit.
8. Discuss the need for biasing a transistor. Illustrate the DC load line analysis of BJT.
Sketch and illustrate various biasing techniques of JFET.
Page 1 of 2
UNIT V
9. Give the complete analysis of CB transistor amplifier circuit using h-parameters. Derive expressions
for the current gain, voltage gain, input impedance and output admittance.
Sketch the h-parameters equivalent circuit for a common emitter amplifier and derive the expression
for Ai Ri, Av.
10. Describe the analysis of generalized transistor amplifier circuit using h-parameter model. Derive
the equation for input impedance, voltage gain and output admittance.
Derive the expressions for Zi, Zo and Av for common source J-FET amplifier.
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